PURPOSE: To maintain a crystal having high quality with excellent uniformity extending over a large area, and to reduce the cost of a device manufacture by the growth crystal largely by depositing carbon on the back of a substrate, heating carbon through high-frequency induction and heating the substrate by heat from heated carbon.
CONSTITUTION: A substrate 13, on the back thereof carbon 21 in thickness of 300μm is deposited through a CVD method, is positioned on a susceptor 20 made of quartz placed with a slight angle. Carbon 21 is heated through high-frequency induction, and the substrate 13 is heated by heat from carbon 21. There is no clearance between the substrate and carbon as a heating body, thus uniformly heating the substrate even under decompression.
ONAKA SEIJI
OGURA MOTOTSUGU
