Title:
VAPOR GROWTH OF SEMICONDUCTOR AND DEVICE THEREOF
Document Type and Number:
Japanese Patent JPS5992521
Kind Code:
A
Abstract:
PURPOSE:To perform growth of a semiconductor separating mutually gases of the plural number by a method wherein gas not to apply a change to composition of a crystal is flowed between mutual gases of the plural number. CONSTITUTION:Because a gas current 19 is flowing between gas currents 11, 12 in a speed higher than the gas currents 11, 12, the gas currents 11, 12 are not mixed. Accordingly, the gas current 12 can not reach a semiconductor substrate 14, and composing gas of the gas current 11 only grows a growth layer 13. The gas flow velocity of the gas currents 11, 12 is made to 5cm/sec, the gas current 19 is made as the H2 gas current, and the flow velocity is made to 10cm/sec, for example. As a result, the gas currents 11, 12 are not mixed.
Inventors:
KATOU YOSHITAKE
Application Number:
JP20267282A
Publication Date:
May 28, 1984
Filing Date:
November 18, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
C23C16/455; H01L21/205; C23C16/44; (IPC1-7): H01L21/205
Attorney, Agent or Firm:
Uchihara Shin