Title:
VAPOR-PHASE EPITAXIAL CROWING METHOD FOR I-V GROUP COMPOUND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPS6060714
Kind Code:
A
Abstract:
PURPOSE:To enable to perform an epitaxial growth having a steep boundary on a substrate of large area by a method wherein the quartz tube provided at the tip of the hole to be used for a gas blowing out hole is formed in such a manner that it performs a backward-forward movement passing through the partition located between a preparatory chamber and a growing chamber. CONSTITUTION:The quartz tubes 10-12 wherein In and Ga will be placed are formed in such a manner that they can be moved backward and forward passing through the partition located between a preparatory chamber 14 and a growing chamber 15a. Gas blowing out holes 13 are provided at the tips of the tubes 10- 12, the position of the hole 13 enters the chamber 14 and the chamber 15 by the movement of the tubes 10-12, and gas is used for epitaxial growth. The composition of growing atmospheric gas of the chamber 15 is changed, and a multilayer structure is epitaxially grown on the substrate 5.
More Like This:
Inventors:
KAKUI AKIRA
Application Number:
JP16976083A
Publication Date:
April 08, 1985
Filing Date:
September 14, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/205; (IPC1-7): H01L21/205
Attorney, Agent or Firm:
Uchihara Shin
Previous Patent: A manufacturing method of the toner for electrostatic A watch development
Next Patent: VAPOR GROWTH METHOD
Next Patent: VAPOR GROWTH METHOD