PURPOSE: To omit etching of a susceptor after deposition of polycrystalline silicon and to contrive the increase of operating efficiency of the titled device by covering a surface of the susceptor other than a part of the susceptor wherein a wafer is set thereon with quartz glass.

CONSTITUTION: In a vertical-type vapor phase growth device, the surfaces of a susceptor 3 other than the parts wherein the wafers 2 set on the susceptor 3 are covered by the quartz glass plates 6. Then the wafers 2 are set to the counterbore parts on the susceptor 3 and the polycrystalline silicon layers 5 of a substrate for separating and holding a dielectric material are deposited. Thereafter the wafers 2 and the quartz glass plates 6 are taken off and the wafers 2 are sent to a grinding stage. Polycrystalline silicon 6 deposited on the quartz glass plates 6 is removed by etching treatment. By this device, the consumption of gaseous hydrogen chloride can be decreased and also the service life of the susceptor 3 is enhanced.