Title:
VAPOR PHASE GROWTH SYSTEM
Document Type and Number:
Japanese Patent JP2701767
Kind Code:
B2
Abstract:
PURPOSE: To ensure a long-time stability of substrate heating characteristics of a cold wall type single-wafer vapor phase growth system and improve a substrate temperature distribution thereof.
CONSTITUTION: This system is provided with a growth chamber 102 wherein a film is to be formed on a wafer 101 which has been heated in a reduced pressure, a susceptor 103 on which the wafer is to be mounted with its surface exposed, a heater 105 which is installed on the rear face side of the wafer in a substrate mounting table 104, and a gas nozzle 116 through which reaction gas is brought in into the growth chamber. In each of a heating chamber 107 wherein a heater 106 for heating the wafer 101 is installed and the growth chamber 102, a turbo molecular pump 108 is installed. A part or the entire body of the substrate susceptor 103 which supports the wafer 101 which is to be processed is made of silicon single crystals and polycrystalline silicon.
Inventors:
Seiichi Shishiguchi
Toru Aoyama
Tatsuya Suzuki
Toru Aoyama
Tatsuya Suzuki
Application Number:
JP3152695A
Publication Date:
January 21, 1998
Filing Date:
January 27, 1995
Export Citation:
Assignee:
NEC
International Classes:
C30B25/02; C23C16/44; C23C16/458; C23C16/46; C30B25/12; H01L21/20; H01L21/205; (IPC1-7): H01L21/205; C23C16/44; C30B25/12
Domestic Patent References:
| JP3224223A |
Attorney, Agent or Firm:
Soro Koro
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