Title:
VAPOR PHASE SYNTHESIS OF BORON NITRIDE
Document Type and Number:
Japanese Patent JP2569423
Kind Code:
B2
Abstract:
PURPOSE: To provide a method for synthesizing dense boron nitride under 1 atm or at relatively low temperatures.
CONSTITUTION: This method for vapor phase synthesis is to use a hot plasma or nonequilibrium plasma and use boron trifluoride as boron source and a nitrogen-contg. compound as nitrogen source. In the method, the ratio H/F in the feedstock gas is set at ≤1. The substrate temperature is ≥200°C. Thus, the objective dense boron nitride with a density of ≥1.95g/cm3 can be obtained.
Inventors:
Seiichiro Matsumoto
Norihiro Nishida
Moriyoshi Yusuke
Kazuo Akashi
Norihiro Nishida
Moriyoshi Yusuke
Kazuo Akashi
Application Number:
JP34355793A
Publication Date:
January 08, 1997
Filing Date:
December 15, 1993
Export Citation:
Assignee:
Director, Institute for Inorganic Materials, Science and Technology Agency
International Classes:
C01B21/064; B01J19/08; (IPC1-7): C01B21/064; B01J19/08
Domestic Patent References:
| JP5254808A |
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