Title:
VAPOR-PHASE SYNTHESIS OF DIAMOND AND APPARATUS THEREFOR
Document Type and Number:
Japanese Patent JPH04209796
Kind Code:
A
Abstract:
PURPOSE:To expand the deposition area of diamond in the direct-current thermal plasma vapor-phase synthesis by stirring a plasma jet. CONSTITUTION:Gas 13 supplied between an anode 2 and a cathode 3 of a plasma torch 1 in a vacuum chamber 11 is converted to a plasma by electric discharge between the electrodes to obtain a plasma jet 7 containing a carbon material. The plasma jet is blasted to a substrate 9 to synthesize a diamond crystal 8. The plasma jet 7 is stirred with a stirring member 5 placed around the flow channel of the plasma jet in the course of moving the jet from the torch 1 to the substrate 9. A water-cooled substrate holder 10 holding the substrate 9 is cooled with cooling water 17. A diamond having large deposition area can be produced by this process.
Inventors:
YAMANOI KIYOSHI
INOUE MITSUHIRO
INOUE MITSUHIRO
Application Number:
JP33936190A
Publication Date:
July 31, 1992
Filing Date:
November 30, 1990
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD
International Classes:
C30B29/04; (IPC1-7): C30B29/04
Attorney, Agent or Firm:
Hirose Akira