Title:
VARACTOR AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH07193155
Kind Code:
A
Abstract:
PURPOSE: To realize a varactor that is integrated in an integrated circuit and has a low series resistance and a desired capacitance change. CONSTITUTION: This varactor 10 is formed by using the BICMOS process. An N-well 28 of a varactor region 13 is formed in an epitaxial layer 22. A cathode region 55 is formed in the N-well 28 by doping the N-well 28 with an N-channel dopant. A cathode electrode 91 is formed on the epitaxial layer 22 is patterning a polycrystalline silicon layer. Then the cathode electrode 91 is doped by the N-channel dopant. A region adjacent to the cathode region 55 is doped to form a low-concentration doping region 103. The low-concentration doping region 103 is doped by a P-channel dopant to form an anode region 109.
Inventors:
IAFUAN RAHIMU
BOO YUAN SHII FUAN
JIYURIO KOSUTA
BOO YUAN SHII FUAN
JIYURIO KOSUTA
Application Number:
JP30969494A
Publication Date:
July 28, 1995
Filing Date:
November 18, 1994
Export Citation:
Assignee:
MOTOROLA INC
International Classes:
H01L21/8249; H01L27/06; H01L29/93; (IPC1-7): H01L21/8249; H01L27/06; H01L29/93
Attorney, Agent or Firm:
Yoshiaki Ikeuchi
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