VARIABLE CAPACITANCE DIODE OF PLANAR STRUCTURE WITH SUPER-STEP JUNCTION AND MANUFACTURE OF SUCH DIODE

Title:

VARIABLE CAPACITANCE DIODE OF PLANAR STRUCTURE WITH SUPER-STEP JUNCTION AND MANUFACTURE OF SUCH DIODE

Document Type and Number:

Japanese Patent JPS62159474

Kind Code:

A

Abstract:

The invention provides a variable capacity diode with a plane structure so that it may be formed in an integrated circuit, this diode has, on the substrate, three coplanar regions. The first and second uniformly doped regions support the contact making metallizations. The transition region has a variation of doping level, low at one end and high at the other end. This variation is obtained by implantation by means of a focused ion beam, with constant energy and sweeping at increasing doses, which allows a hyperabrupt profile to be obtained. The diode is a p-n junction of Schottky contact diode.

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Inventors:

DEIMITORIOSU PABURIDEISU
IBU ARUSHIYANBOO
REONIDASU KARAPIPERISU

Application Number:

JP31599786A

Publication Date:

July 15, 1987

Filing Date:

December 30, 1986

Export Citation:

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Assignee:

THOMSON CSF

International Classes:

H01L29/93; (IPC1-7): H01L29/93

Attorney, Agent or Firm:

Takashi Koshiba

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