To provide a variable capacitance thin film capacitor which changes little in capacitance with high-frequency signals, varies much in capacitance with a DC bias, is protected against disconnection, and is restrained from deteriorating its characteristics and reliability, and to provide a high-frequency component.

First to N-th variable capacitance elements each composed of a pair of electrodes 2 and 5, a thin film dielectric layer 5, and input/output terminal-side bias lines V1 and V2 are formed on a support substrate 1. The input/output terminal-side bias lines V1 and V2 are connected to one electrode formed directly on the support substrate 1.