To provide a variable capacitor that has an extremely small number of lattice defects in oxygen in the entire dielectric layer, and hence has an extremely small amount of dielectric loss, and to provide the manufacturing method of the variable capacitor.

In the variable capacity capacitor where a lower electrode layer 2, a dielectric layer 3 where a dielectric rate changes by applying an external control voltage, and an upper electrode layer 4 are deposited successively, the dielectric layer 3 is made of a Perovskite type oxide crystal particle containing at least Ba, Sr, and Ti, and the crystal particle is oriented randomly without being oriented in a specific direction. In addition, when the dielectric layer 3 is to be formed, an amorphous dielectric layer is formed on a ground dielectric layer 2 that is orientated in (110) at an extremely low temperature, and then is heat-treated to manufacture the variable capacity capacitor.