To provide a variable voltage capacitor having improved C-V linearity.

This variable voltage capacitor contains a support board 41 having a doped layer 42, which has a insulating layer 45 on it, first, second and third capacitors 47, 49, and 51 which is defined by first, second, and third conductor segments 46, 48, 50 is paralell with the doped layer and across form it by the insulating layer. The first, the second, and the third segments work as external contacts, a terminal opposite to the first, second, and third capacitor is respectively connected via the doped layer. A suitable example is one where the board is a semiconductor wafer, doped layer is grown, epitaxially, the insulating material is of high permittivity such as zirconium titanate or similar to it, and the segment is gold.