Title:
VAPOR PHASE GROWTH METHOD AND SYSTEM FOR GAN THIN FILM
Document Type and Number:
Japanese Patent JP3198956
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To suppress decomposition of a reaction gas, production of intermediate products and thermal convection, to increase the availabily of the source material gas, and to produce a uniform GaN film without production of particles by separately supplying a Ga org. metal gas and a nitrogen compd. gas, cooling a reaction gas supply system and injection tubes, and injecting reaction gases in oblique directions through injection tubes disposed symmetric around the axial line of a substrate so that the gases are mixed and immediately deposited on the substrate.
SOLUTION: An injection port 13 for gas B and an injection port 18 for gas A are disposed symmetric around the center axial line, and the injected gases are converged to the crossing point 35 of the gas injection ports, mixed and immediately deposited on a substrate 34. The conical mixing space where the source gases are mixed is enough small so that thermal convection is hardly caused. Therefore, almost all the source material gases reach the substrate 34 to contribute to the reaction to grow a thin film. Since the source material gases form a uniform flow along the conical mixing space 33, the thin film is formed highly uniformly. As for cooling, a cooling water is introduced from cooling water ports IN19, 24, and 27.
Inventors:
Kiyoshi Kubota
Application Number:
JP33504996A
Publication Date:
August 13, 2001
Filing Date:
November 28, 1996
Export Citation:
Assignee:
Nissin Electric Co., Ltd.
International Classes:
C30B25/14; C30B29/38; H01L21/205; H01L33/32; (IPC1-7): C30B29/38; C30B25/14; H01L21/205
Domestic Patent References:
| JP6132232A | ||||
| JP4187598A |
Attorney, Agent or Firm:
Shigeki Kawase
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