To improve equality and productivity of processed goods, by arranging the heater of a heating furnace at the side of the heat treatment position of a process chamber, and setting the heating temperature so that the heating temperature distribution may be maximum at the heat treatment position and lower gradually in the vertical direction.

Since the heater 21 of a heating furnace 2 is provided at the side of the heat treatment position 13 of a semiconductor wafer W, a section lower in temperature, which is caused by the radiant heat from the heater 21 being shaded by a semiconductor wafer W and a wafer support 3, can be prevented from coming into being under the heat treatment position 13. Therefore, the heat history at the time of ascent and descent of the semiconductor wafer W can be fixed. Accordingly, especially with regard to several sheets of wafers W immediately after the start of processing, the equality of accuracy in processing such as film thickness, etc., in the item and the equality of accuracy in processing such as film thickness, etc., among many sheets of wafers W can be secured. Moreover, because the heating temperature of a process chamber 1 becomes maximum at the section of the heat treatment position 13, the semiconductor wafer W can be efficiently heat-treated.