To provide a vertical micro-resonator light-emitting diode with high emission efficiency.

A vertical micro-resonator is formed of a pair of multilayer reflection layers 3 and 9 for a hall wavelength for light-emitting wavelength, in resonator length, and a quantum well layer 7 is provided at its center, thus the quantum well layer 7 is present at the antinode of the standing wave of the optical wave, with natural output enhanced due to the resonator QED effect. With barrier layers 6a and 6b and clad layers 4 and 8 provided, band gap inclination layers 5a and 5b are provided between both layers, with a band gap of the barrier layer larger than that of the clad layer. With this configuration, the difference in band gap between a quantum well layer and a barrier layer is made larger, without reducing difference in refractive index between the multilayer reflection layers 3 and 9 and clad layers 4 and 8.