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Title:
VERTICAL RESONATOR TYPE SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JP2605637
Kind Code:
B2
Abstract:

PURPOSE: To keep polarized light stable up to a larger injection current value or a higher temperature by a method wherein a quantum fine wire structure, which is formed on a slant substrate and turned to a specified direction, is used as an active layer.
CONSTITUTION: A vertical resonator type quantum fine wire laser structure using a quantum fine wire structure, which is formed on a (110) substrate of the orientation [1, -1, 0] and the orientation [001], which are vertical to the substrate within the surface of the substrate, and is turned to the orientation [1, -1, 0], as an active layer is formed into a laser structure that the probability of an excitation subband transition is kept lowest to the probability of a ground subband transition and polarized light is kept stabler. From this structure, even if the laser structure is a structure that the orientation of the substrate is shifted by 5 degrees from the face (110) or the orientation of the fine wire structure is shifted by 5 degrees or so from the orientation <1, -1, 0> to an arbitrary direction, this effect of keeping the polarized light stabler is hardly changed. Accordingly, by this effect, the vertical resonator type quantum fine wire structure keeps the polarized light stable up to a larger injection current value or a higher temperature.


Inventors:
Yamaguchi, Atsushi
Application Number:
JP1994000265019
Publication Date:
April 30, 1997
Filing Date:
October 28, 1994
Export Citation:
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Assignee:
NEC CORP
International Classes:
H01S5/00; (IPC1-7): H01S3/18
Domestic Patent References:
JP653599A
Foreign References:
Other References:
J.APPL.PHYS.79〜6!(1996)P.3340−3342
Attorney, Agent or Firm:
京本 直樹 (外2名)