PURPOSE: To make it possible to expose and transfer reliably a pattern to an extent of submicrons with a shynchrotron radiant light (SOR) which is radiated horizontally by a method wherein with the threedimensional relative position of a mask and a wafer conformed strictly, a step and repeat operation is performed in a vertical plane.
CONSTITUTION: A pretreatment wafer 2 is taken out from a wafer stocker 24 by a wafer loader 26 and is sucked using vacuum on a prealignment stage 21. Here, after a rough alignment of the wafer 2 is performed using an image processing technique or a photoelectric conversion element, such as a laser diode and the like, the wafer is transferred up to a wafer stage 18 by a wafer loader 22 and is sucked using vacuum. Then, after the stage 18 is moved to an exposure position to conform strictly the relative position of the wafer and a mask 3, a SOR is irradiated to expose and transfer a pattern on the mask to the wafer 2. Moreover, the whole surface of a the wafer 2 is subjected to exposure by the step and repeat operation of the stage 18. The wafer 2 finished an exposure is again housed in a wafer stocker 25 by the loaders 20 and 22 and an exposure of one sheet of the wafer 2 is finished.
SEKIGUCHI HIDENORI
KAMATA TORU
SAKATA YUJI
