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Title:
VOLTAGE GENERATION CIRCUIT, SEMICONDUCTOR DEVICE AND METHOD FOR CONTROLLING VOLTAGE GENERATION CIRCUIT
Document Type and Number:
Japanese Patent JP2013027073
Kind Code:
A
Abstract:

To generate an internal voltage by capability corresponding to an external voltage.

In the voltage generation circuit, a boosting unit 20 includes three pump circuits 21 to 23 connected in series, and the respective pump circuits 21 to 23 perform a pumping operation based on a clock signal CLK1 which has been generated by an oscillation unit 31, and generate a voltage which has boosted an input voltage. Accordingly, the boosting unit 20 boosts an external voltage Vdd with the respective pump circuits 21 to 23 and generates an internal voltage Vpp. A control unit 32 detects variation of the internal voltage Vpp and controls the number of stages of the pump circuits 21 to 23 included in the boosting unit 20 in accordance with the detection result (variation).


Inventors:
KURODA SUSUMU
Application Number:
JP2011156874A
Publication Date:
February 04, 2013
Filing Date:
July 15, 2011
Export Citation:
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Assignee:
FUJITSU SEMICONDUCTOR LTD
International Classes:
H02M3/07
Domestic Patent References:
JP2007336722A2007-12-27
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda