To provide a method of drying wafers with which the pure water and humidity existing on the surface of wafer in the fluid process and wet process can be removed easily during the processing of semiconductor element.
In this method, a wafer is subjected to primary rinse with pure water supplied from a high-flow pure water supplying machine in a rinse zone filled with pure water; the wafer is subjected to secondary rinse by lifting the wafer having completed the primary rinse above the surface level of the pure water; discharging the pure water through an overflow unit and then supplying in one direction the pure water through a one-way stream module; the wafer having finished with the secondary rinse is lifted above the surface level of the pure water and the pure water and humidity existing on the surface of wafer is replaced with the vapor of polarized organic solvent in a replacing/ drying zone, where the vapor of the polarized organic solvent and inert carrier gas are supplied from a spray zone; and the vapor of the polarized organic solvent adsorbed by the wafer is removed by supplying only the inert carrier gas to the replacing/drying zone from the spray zone.
KIM KEICHIN
KIM TOKUKO
AN SHOHACHI
| JPH10199850A | 1998-07-31 | |||
| JPH0938605A | 1997-02-10 | |||
| JP2000003900A | 2000-01-07 | |||
| JPH05166787A | 1993-07-02 | |||
| JPH10289894A | 1998-10-27 |