Title:
WAFER GENERATION METHOD AND WAFER GENERATION DEVICE
Document Type and Number:
Japanese Patent JP2023083924
Kind Code:
A
Abstract:
To provide a wafer generation method capable of reducing a processing defect by removing peeling chips which are generated in a case where a wafer is peeled from an ingot, and a wafer generation device.SOLUTION: A wafer generation method includes: a peeling layer forming step 1 of forming a peeling layer including a modified part and a crack by relatively moving an ingot and a light condensing point in a state where the light condensing point of a laser beam of a wavelength having transmissivity with respect to the ingot is positioned in a depth corresponding to a thickness of a wafer which should be generated; a wafer generating step 2 of peeling the wafer from the ingot with the peeling layer defined as a starting point; a tape sticking step 3 of sticking an adhesive tape to at least any one of a peeling surface of the wafer and a peeling surface of the ingot; a tape peeling step 4 of peeling the adhesive tape, thereby removing peeling chips, which are deposited on the peeling surface, from the peeling surface; and a grinding step 5 of grinding the peeling surface from which the peeling chips are removed.SELECTED DRAWING: Figure 3
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Inventors:
NAGAMI MASARU
Application Number:
JP2021197931A
Publication Date:
June 16, 2023
Filing Date:
December 06, 2021
Export Citation:
Assignee:
DISCO ABRASIVE SYSTEMS LTD
International Classes:
H01L21/304; B23K26/53; B24B1/00; B24B7/04; B28D5/04; B28D7/02
Attorney, Agent or Firm:
Sakai International Patent Office