To provide a wafer heating film deposition device and a method for controlling wafer temperature, capable of accurately measuring a wafer temperature during the film deposition, changing P, I, D values for settings of PID control in accordance with the wafer temperature in real time, and improving the operating efficiency of the device.

The wafer heating film deposition device comprises a thermocouple 5 for measuring a temperature of heater 3; and a radiation thermometer 15 for measuring a surface temperature of a semiconductor wafer. A calibration table for each measured value of the thermocouple 5 and the radiation thermometer 15 is hold in a thermoregulator 9. The device is provided with a control system by the thermocouple 5 in the thermoregulator 9 and a PID control system by the radiation thermometer 15, and allow switching a control by the thermocouple 5 and the radiation thermometer 15 to control the wafer temperature by the radiation thermometer 15 in creating the calibration table.