Title:
ヘテロ接合バイポーラトランジスタ用ウエハおよびヘテロ接合バイポーラトランジスタ
Document Type and Number:
Japanese Patent JP7160562
Kind Code:
B2
Abstract:
Provided is a technology capable of improving the quality of a GaN layer that is formed on an underlying substrate. A group III-nitride laminated substrate includes an underlying substrate, a first layer that is formed on the underlying substrate and is made of aluminum nitride, and a second layer that is formed on the first layer and is made of gallium nitride. The second layer has a thickness of 10 μm or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.
Inventors:
Ken Meguro
Junichiro Takeda
Hiroyuki Tomioka
Junichiro Takeda
Hiroyuki Tomioka
Application Number:
JP2018095436A
Publication Date:
October 25, 2022
Filing Date:
May 17, 2018
Export Citation:
Assignee:
SIOX Co., Ltd.
Sumitomo Chemical Co., Ltd.
Sumitomo Chemical Co., Ltd.
International Classes:
H01L21/331; H01L29/737
Domestic Patent References:
| JP2004022835A | ||||
| JP2016119364A | ||||
| JP2002289835A | ||||
| JP2011054688A |
Foreign References:
| US5552617 |
Attorney, Agent or Firm:
Masahiro Fukuoka
Hideo Tachibana
Hideo Tachibana
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