Title:
WAFER AND ITS FORMATION
Document Type and Number:
Japanese Patent JPH0697014
Kind Code:
A
Abstract:
PURPOSE: To provide a silicon wafer wherein oxygen is hard to precipitate even when a heat treatment is executed and the generation of a dislocation can be restrained more satisfactorily regarding the silicon wafer used to form a semiconductor element or the like.
CONSTITUTION: A wafer 11 is composed of a group IV semiconductor which contains oxygen at a concentration, lithium(Li) at a concentration or higher and p-type impurities. In the wafer, the p-type impurities and the lithium(Li) compensate mutual concentrations and its resistivity is set at 1Ω.cm or higher.
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Inventors:
KANEDA CHIHOKO
Application Number:
JP24468992A
Publication Date:
April 08, 1994
Filing Date:
September 14, 1992
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/02; (IPC1-7): H01L21/02
Attorney, Agent or Firm:
Keizo Okamoto