レーザ書込みシステムに使用される磁気抵抗センサのウェハ・レイアウト、およびレーザ走査方法

Japanese Patent JP7026402

B2

A magnetoresistive sensor wafer layout scheme used for a laser writing system and a laser scanning method are disclosed. The layout scheme comprises a magnetoresistive multilayer film (1) including an antiferromagnetic pinning layer (4) that is arranged into a rectangular array of sensor dice on the wafer surface. The antiferromagnetic pinning layers (4) of magnetoresistive sensing units are magnetically oriented and directionally aligned by means of the laser writing system. The magnetoresistive sensing units are electrically connected into bridge arms, and the bridge arms are electrically connected into a magnetoresistive sensor. Magnetoresistive sensing units in the dice are arranged into at least two spatially-isolated magnetoresistive orientation groups; in the magnetoresistive orientation groups, the antiferromagnetic pinning layers (4) of the magnetoresistive sensing units have the same angle of magnetic orientation. This angle of magnetic orientation is 0-360 degrees. Generally, the angles of magnetic orientation of two adjacent magnetoresistive orientation groups are different, and each magnetoresistive orientation group is adjacent to a magnetoresistive orientation group with the same angle of magnetic orientation in at least one adjacent dice. This layout scheme can reduce the time required for a laser scanning process, while producing single-chip push-pull bridge magnetic sensors.

Deak, James Geza
Butterfly, chimin

JP2019513846A

February 28, 2022

September 13, 2017

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MULTIDIMENSION TECHNOLOGY CO., LTD.

G01R33/09; G11B5/39; H01L43/08; H01L43/12

JP2002299728A
JP2016525689A
JP2018517128A

CN204739999U
CN104776794A
CN102208530A

Patent Business Corporation Unias International Patent Office

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