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Title:
WAFER POLISHING METHOD AND APPARATUS
Document Type and Number:
Japanese Patent JP3882992
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a wafer polishing method and apparatus which can improve the polishing efficiency.
SOLUTION: In this polishing method, a work substrate W on which two or more kinds of films are formed is polished while it is pressed toward a polishing pad 20 during supply of a polishing agent slurry 40. A positive pole 36 is connected with the work substrate W and a negative pole 38 with the polishing pad 20, respectively. Moreover, the polishing is performed while the electrical power is supplied to the polishing agent slurry 40. In this polishing method, the polishing rates for the two or more kinds of films are changed by changing the power feeding condition.


Inventors:
Toshio Doi
Takashi Fujita
Application Number:
JP2001393728A
Publication Date:
February 21, 2007
Filing Date:
December 26, 2001
Export Citation:
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Assignee:
Tokyo Seimitsu Co., Ltd.
Toshio Doi
International Classes:
H01L21/304; B23H5/08; B24B37/00; (IPC1-7): H01L21/304; B23H5/08; B24B37/00
Domestic Patent References:
JP2001077117A
JP2001326204A
JP2001196335A
JP10270412A
JP6061205A
Attorney, Agent or Firm:
Kenzo Matsuura