To provide a wafer processing method and system in which a wafer can be processed easily.

A water-soluble resist is applied to a rear side of a wafer along with a planned division line (printing step). The water-soluble resist applied to the wafer is dried (drying step). A metal film is formed over all the rear side of the wafer after drying (metal film forming step). The wafer in which the metal film is formed is cleaned to release and remove the water-soluble resist (cleaning step). Thus, the metal film in a portion to which the water-soluble resist is applied is removed. Thereafter, the wafer is divided along the planned division line (dividing step). Since the metal film is not formed on the planned division line, clogging of a dicing blade can be prevented. Furthermore, dicing by a laser can be performed.