Title:
ウェハ加工方法及びウェハ加工システム
Document Type and Number:
Japanese Patent JP6703073
Kind Code:
B2
Abstract:
To provide a wafer processing method and a wafer processing system, capable of efficiently obtaining a chip having stable quality.SOLUTION: A wafer processing method comprises a modified region forming step and a grinding step. The modified region forming step forms a laser modified region inside a wafer by irradiating the wafer with laser beams from a rear surface side at a side opposite to a device surface of the wafer with a chuck held at the device surface side of the wafer and condensing the laser beams at a position at the rear surface side of the wafer from the target surface set inside the wafer. The grinding step thins the wafer with the device surface side of the wafer held in the chuck by grinding the wafer from a rear surface of the wafer to the target surface using a grinding wheel.SELECTED DRAWING: Figure 9
Inventors:
Shuhei Oshida
Shimizu Tsubasa
Takashi Fujita
Akira Uekihara
Shimizu Tsubasa
Takashi Fujita
Akira Uekihara
Application Number:
JP2018188411A
Publication Date:
June 03, 2020
Filing Date:
October 03, 2018
Export Citation:
Assignee:
Tokyo Seimitsu Co., Ltd.
International Classes:
H01L21/301; B23K26/53; B24B1/00; B24B7/04; B24B7/22; B28D5/00; H01L21/304
Domestic Patent References:
| JP2009290052A | ||||
| JP2005166728A | ||||
| JP3762409B2 | ||||
| JP2006179790A | ||||
| JP2006216895A | ||||
| JP5368493A |
Attorney, Agent or Firm:
Kenzo Matsuura