Title:
WAFER PROCESSING METHOD
Document Type and Number:
Japanese Patent JP2017204607
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To divide a wafer so as to prevent a corner of a device chip from being broken.SOLUTION: A wafer processing method comprises the steps of: focusing a laser beam of a wavelength permeable to a wafer (W) on the inside of the wafer, and applying the laser beam to the wafer from its backside (W2) along a first street (L1) and a second street (L2), thereby forming a quality-modified layer (R) in the wafer; and grinding the wafer from the wafer backside along the first and second streets, thereby dividing the wafer into device chips (DC) while using the quality-modified layer as a start point after formation of the quality-modified layer. In the step of forming the quality-modified layer, the laser beam is applied with the first street aligned with X-axis direction; each transfer to an adjacent device (D), the laser beam is shifted by at given distance in Y-axis direction within the first street and then, the quality-modified layer is formed. This prevents a corner of each device chip from rubbing against a corner of an adjacent device chip on a diagonal line when dividing the wafer.SELECTED DRAWING: Figure 6
Inventors:
HIROZAWA SHUNICHIRO
Application Number:
JP2016096972A
Publication Date:
November 16, 2017
Filing Date:
May 13, 2016
Export Citation:
Assignee:
DISCO ABRASIVE SYSTEMS LTD
International Classes:
H01L21/301; B23K26/53
Domestic Patent References:
| JP2015201585A | 2015-11-12 | |||
| JP2004186340A | 2004-07-02 | |||
| JPH06275714A | 1994-09-30 | |||
| JP2006043713A | 2006-02-16 | |||
| JP2010123797A | 2010-06-03 |
Attorney, Agent or Firm:
Hiroyoshi Aoki
Amada Masayuki
Amada Masayuki