Title:
WAFER SUPPORT IN SEMICONDUCTOR EPITAXIAL MANUFACTURING APPARATUS, MANUFACTURING METHOD OF THE SAME, SEMICONDUCTOR EPITAXIAL MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2014072477
Kind Code:
A
Abstract:
To provide a wafer support which can inhibit the occurrence of crystal defects and particles of a manufactured semiconductor epitaxial wafer though used in a semiconductor epitaxial manufacturing apparatus for a long period of time.
A wafer support for raising a satellite for loading a semiconductor substrate by a gas in a semiconductor epitaxial manufacturing apparatus for epitaxial growth on a surface of the semiconductor substrate comprises: a protection layer or a protection tube on a whole area of a gas passage which is formed in the wafer support and through which the gas for raising the satellite passes.
Inventors:
HAGIMOTO KAZUNORI
SHINOMIYA MASARU
TSUCHIYA KEITARO
GOTO HIROICHI
SATO KEN
SHIKAUCHI HIROSHI
SHINOMIYA MASARU
TSUCHIYA KEITARO
GOTO HIROICHI
SATO KEN
SHIKAUCHI HIROSHI
Application Number:
JP2012219102A
Publication Date:
April 21, 2014
Filing Date:
October 01, 2012
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
SANKEN ELECTRIC CO LTD
SANKEN ELECTRIC CO LTD
International Classes:
H01L21/205; C23C16/458; H01L21/683
Attorney, Agent or Firm:
Mikio Yoshimiya