Title:
WAFER THERMAL TREATMENT REACTION CHAMBER AND WAFER THERMAL TREATMENT DEVICE
Document Type and Number:
Japanese Patent JP3447898
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a reaction chamber which is capable of distributing radiant heat and a reactive gas flow uniformly over the surface of a wafer and ensuring the wafer of an irreducibly minimal space by a method wherein a reaction chamber main body of transparent quartz glass is formed into a nearly flat dome where the wafer is housed upright.
SOLUTION: A wafer thermal treatment device is mainly composed of an upright sheet reaction chamber 11, a heater 12 provided outside the reaction chamber 11, and upright wafer boats 23a and 24a which support a wafer 10 upright. The upright sheet reaction chamber 11 is composed of a nearly flat dome-shaped main body of transparent quartz glass whose front A is nearly ring-shaped and confronts a thermal treatment face and side is hollow, flat, and elliptical in cross section and which is possessed of a flat lower opening through that a wafer is inserted and a flange 11a of non-transparent quartz glass which is welded to the dome-shaped main body surrounding the flat lower opening.
Inventors:
Yoshiaki Ise
Shoji Takahashi
Shigeharu Suzuki
Shoji Takahashi
Shigeharu Suzuki
Application Number:
JP22439796A
Publication Date:
September 16, 2003
Filing Date:
August 07, 1996
Export Citation:
Assignee:
Yamagata Shinetsu Quartz Co., Ltd.
Shin-Etsu Quartz Products Co., Ltd.
Shigeharu Suzuki
Shin-Etsu Quartz Products Co., Ltd.
Shigeharu Suzuki
International Classes:
F27D5/00; H01L21/205; H01L21/22; H01L21/31; H01L21/324; (IPC1-7): H01L21/22; F27D5/00; H01L21/205; H01L21/31; H01L21/324
Domestic Patent References:
| JP2299225A | ||||
| JP7335582A |
Attorney, Agent or Firm:
Masahisa Takahashi (1 person outside)