WAFER THERMAL TREATMENT REACTION CHAMBER AND WAFER THERMAL TREATMENT DEVICE

Title:

WAFER THERMAL TREATMENT REACTION CHAMBER AND WAFER THERMAL TREATMENT DEVICE

Document Type and Number:

Japanese Patent JPH09260297

Kind Code:

A

Abstract:

To obtain a reaction chamber which is capable of distributing radiant heat and a reactive gas flow uniformly over the surface of a wafer and ensuring the wafer of an irreducibly minimal space by a method wherein a reaction chamber main body of transparent quartz glass is formed into a nearly flat dome where the wafer is housed upright.

A wafer thermal treatment device is mainly composed of an upright sheet reaction chamber 11, a heater 12 provided outside the reaction chamber 11, and upright wafer boats 23a and 24a which support a wafer 10 upright. The upright sheet reaction chamber 11 is composed of a nearly flat dome-shaped main body of transparent quartz glass whose front A is nearly ring-shaped and confronts a thermal treatment face and side is hollow, flat, and elliptical in cross section and which is possessed of a flat lower opening through that a wafer is inserted and a flange 11a of non-transparent quartz glass which is welded to the dome-shaped main body surrounding the flat lower opening.

Inventors:

ISE YOSHIAKI
TAKAHASHI SHIYOUJI
SUZUKI SHIGEHARU

Application Number:

JP22439796A

Publication Date:

October 03, 1997

Filing Date:

August 07, 1996

Export Citation:

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Assignee:

SHINETSU SEKIEI YAMAGATA
SHINETSU QUARTZ PROD
SUZUKI SHIGEHARU

International Classes:

F27D5/00; H01L21/205; H01L21/22; H01L21/31; H01L21/324; (IPC1-7): H01L21/22; F27D5/00; H01L21/205; H01L21/31; H01L21/324

Attorney, Agent or Firm:

Masahisa Takahashi (1 person outside)

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