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Title:
ウェーハ及びウェーハの薄化方法並びにウェーハの薄化装置
Document Type and Number:
Japanese Patent JP7419467
Kind Code:
B2
Abstract:
To eliminate wafer damage after performing wafer shape processing and damage of a wafer end face in a step of pressing a polishing tape against an edge portion of the wafer end face.SOLUTION: In a wafer W thinned to a desired thickness by back grinding, an edge portion of a wafer periphery is processed as a chamfered portion W-1 and an upper portion of the chamfered portion W- 1 is horizontally removed from an outer periphery to an inner periphery of the wafer W to a target thickness (T) thinned from an upper surface of the wafer W. When denoting a removal length removed from the outer periphery as L, denoting an angle of the chamfered portion W-1 with respect to a horizon as φ, and denoting a margin as α, the wafer W is processed into a shape so as to satisfy L=T/tan φ + α.SELECTED DRAWING: Figure 5

Inventors:
Shinichi Kishishita
Application Number:
JP2022148244A
Publication Date:
January 22, 2024
Filing Date:
September 16, 2022
Export Citation:
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Assignee:
Tokyo Seimitsu Co., Ltd.
International Classes:
H01L21/304; B24B1/00; B24B7/04; B24B9/00; B24B21/00
Domestic Patent References:
JP2007335521A
JP2015135881A
JP2009119537A
Attorney, Agent or Firm:
Spring Patent Attorney Corporation