To prevent an increase of washing time and a deterioration of washing ability in wafer washing using a high temperature chemical.
In a washing process of a semiconductor wafer 111 using the high temperature chemical 116 by a semiconductor wafer washing device, lowering of chemical temperature caused by heat absorption to a washing chamber 101 and its inside (the semiconductor wafer 111, a rotor 112, or the like) generated just after beginning of washing is prevented. Concretely, the temperature of the semiconductor wafer 111 or the like is raised by a heated fluid such as nitrogen air flow heated by using a heating device 150 or the temperature of the washing chamber 101 is raised by a heat source 160 such as an electric heater, and thereby chemical temperature is held stable during the period from washing start to washing finish.
TANAKA HIROSHI
YOKOI NAOKI
ASAOKA YASUHIRO
AZUMA MASAHIKO
MITSUBISHI ELECTRIC CORP
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