Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3200593
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To increase the capacity of a capacitor by including a first part that becomes a core and a second part that cover the surface of the part that becomes the core in a first electrode layer and increasing the recess and projection of the surface of the second part as compared with the surface of the first part.
SOLUTION: A polycrystalline silicon layer 210b is selectively etched by anisotropic etching, a part being located on the surface of the flat part of a polycrystalline silicon layer 210a is selectively eliminated, and the polycrystalline silicon film 210a and the selectively remained polycrystalline silicon layer 210b are formed in one piece. Then, a silicon layer is formed as first and second parts 21a and 21b with a recessed and projecting surface on the surface of the polycrystalline silicon layers 210a and 210b. The silicon layer is subjected to patterning, thus forming a lower electrode 21. At this time, the recess and projection on the surface of the second part 21b are formed larger than those on the surface of the first part 21a.
Inventors:
Yoshio Hayashide
Wataru Wakamiya
Wataru Wakamiya
Application Number:
JP4168699A
Publication Date:
August 20, 2001
Filing Date:
February 19, 1999
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L27/04; H01L21/822; H01L21/8242; H01L27/108; (IPC1-7): H01L27/108; H01L21/822; H01L21/8242; H01L27/04
Domestic Patent References:
| JP221652A | ||||
| JP6442161A | ||||
| JP1289154A |
Attorney, Agent or Firm:
Fukami Hisaro (3 outside)
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