PURPOSE: To prevent removed contaminants from readhering on semiconductor substrate surfaces in a rinsing treatment stage of an ensuing stage by subjecting the semiconductor substrates subjected to a washing treatment with a washing liquid to a rinsing treatment with anode water or cathode water which is the electrolyzed water of pure water.
CONSTITUTION: A hydrogen persulfooxide washing liquid is used for a tank 202 among respective washing tanks 202 to 213 of this batch-operated silicon wafer washing device, a hydrofluoric acid soln. for the tanks 204, 208, 212, a hydrogen peroxide-ammonia washing liquid for the tank 206 and a hydrochloric acid-hydrogen peroxide washing liquid for the tank 210. The respective washing tanks are provided with rinsing tanks 203, 205, 207, 209, 211, 213 behind these tanks. The electrolyzed anode water 219 of ultra-pure water is disposed in these rinsing tanks 203, 211 and the electrolyzed cathode water 220 of ultra- pure water is disposed in the rinsing tanks 205, 207, 209, 213. The wash is thus rinsed without readhesion of the contaminants removed from the wash surfaces in a deposit removing stage by chemicals in the ensuing stages.
NAKAMORI MASAHARU
YAMANAKA KOJI
IMAOKA TAKAYUKI
FUTATSUGI TAKASHI
YAMASHITA KOFUKU
ORGANO KK