Title:
TRANSPARENT CONDUCTIVE FILM HAVING HIGH GAS BARRIER PROPERTIES
Document Type and Number:
Japanese Patent JP3148368
Kind Code:
B2
Abstract:
PURPOSE: To obtain a transparent conductive film having transparency, flexibility and gas barrier properties by forming a membrane layer consisting of metal oxide such as silicon oxide and polytetrafluoroethylene on the single surface of a polymer film base material.
CONSTITUTION: A membrane layer 2 with a thickness of 10-500nm having a compsn. wherein a mol ratio of at least one kind of metal oxide selected from a group consisting of silicon oxide, aluminum oxide and magnesium oxide and polytetrafluoroethylene is MO: PTFE =0.40-0.4 is formed on at least the single surface of a polymer film base material 11. A transparent conductive film 3 based on indium oxide is formed on at least one surface of this film base material to obtain a transparent conductive film having high gas barrier properties.
Inventors:
Nobuhiro Fukuda
Shin Fukuda
Shin Fukuda
Application Number:
JP18090492A
Publication Date:
March 19, 2001
Filing Date:
July 08, 1992
Export Citation:
Assignee:
Mitsui Chemicals, Inc.
International Classes:
B32B7/02; B32B9/04; B32B27/06; B32B27/18; C08J7/04; C08K3/22; C08L27/12; C08L81/00; C08L81/06; (IPC1-7): B32B9/04; B32B7/02; B32B27/06; C08J7/04; C08K3/22; C08L27/12; C08L81/06