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Title:
湿式洗浄装置および方法
Document Type and Number:
Japanese Patent JP4319803
Kind Code:
B2
Abstract:
An apparatus and method is described for cleaning semiconductor wafers using a dilute aqueous solution including at least 80% deionized water, sulfuric acid, an oxidant such as hydrogen peroxide, and a small amount of hydrofluoric acid (HF), preferably in the range of about 5 ppm to about 12 ppm. The automated system mixes the water, sulfuric acid, hydrogen peroxide, and HF to form a cleaning solution having a target HF concentration within the preferred range, for example at 8 ppm. Subsequently, the system maintains the HF concentration at least within about 0.5 ppm to about 1 ppm of the target HF concentration. Thus the system allows effective and predictable cleaning of semiconductor wafers while minimizing damage to metal features, and minimizing cost and waste disposal impacts.

Inventors:
Charles Jay Taft
Kennis Jay McCullah
George F. Wimet
David El Russ
Robert W. Zigner Jr.
Application Number:
JP2002110323A
Publication Date:
August 26, 2009
Filing Date:
April 12, 2002
Export Citation:
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Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L21/304; H01L21/306; B08B3/00; C11D11/00; G05D21/02; H01L21/02; H01L21/3213
Domestic Patent References:
JP10284456A
JP6333898A
JP11243085A
JP62172244A
Attorney, Agent or Firm:
Hiroshi Sakaguchi
Yoshihiro City



 
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