Title:
白色発光素子
Document Type and Number:
Japanese Patent JP4558656
Kind Code:
B2
Abstract:
The invention relates to a nitride light emitting device including first and second conductivity type nitride layers and a plurality of active regions emitting light of different wavelength. The active regions are sequentially formed between the first and the second conductivity type nitride layers. The active regions include at least one first active region having a plurality of first quantum barrier layers and quantum well layers, and a second active region emitting light of a wavelength larger than that of the first active region. The second active region has a plurality of second quantum barrier layers and at least one discontinuous quantum well structure formed between the plurality of second quantum barrier layers. The discontinuous quantum well structure comprises a plurality of quantum dots or crystallites.
Inventors:
Kim Toshihiro
Min, Kyung Ik
Masayoshi Koike
Min, Kyung Ik
Masayoshi Koike
Application Number:
JP2006023143A
Publication Date:
October 06, 2010
Filing Date:
January 31, 2006
Export Citation:
Assignee:
Samsung Electric Co., Ltd.
International Classes:
H01L33/06; H01L33/32
Domestic Patent References:
| JP2004179493A | ||||
| JP2002232001A | ||||
| JP2004327719A | ||||
| JP2002252371A | ||||
| JP2003078169A |
Attorney, Agent or Firm:
Konobu Kato