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Title:
ボンドパッド間のゲートフィンガを含むワイドバンドギャップ半導体デバイス
Document Type and Number:
Japanese Patent JP6759275
Kind Code:
B2
Abstract:
A semiconductor device includes a semiconductor body of a wide-bandgap semiconductor material. A plurality of first bond areas is connected to a first load terminal of the semiconductor device. First gate fingers are arranged between the first bond areas. The first gate fingers extend in a first lateral direction and branch off from at least one of a first gate line portion and a second gate line portion. Second gate fingers extend in the first lateral direction. A first length of any of the first gate fingers along the first lateral direction is greater than a second length of any of the second gate fingers along the first lateral direction. A sum of the first length and the second length is equal to or greater than a lateral distance between the first gate line portion and the second gate line portion along the first lateral direction.

Inventors:
Peters, Dethard
Application Number:
JP2018092205A
Publication Date:
September 23, 2020
Filing Date:
May 11, 2018
Export Citation:
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Assignee:
INFINEON TECHNOLOGIES AG
International Classes:
H01L29/78; H01L21/3205; H01L21/60; H01L21/768; H01L21/822; H01L21/8234; H01L23/522; H01L27/04; H01L27/06; H01L27/088; H01L29/06; H01L29/12; H01L29/739
Domestic Patent References:
JP2007234850A
JP2013500604A
JP2000101076A
JP2009141007A
JP2003101039A
JP2014531752A
JP2003017697A
JP2012146998A
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation