Title:
WIDE GAP OXIDE SEMICONDUCTOR AND ULTRAVIOLET SENSOR USING THE SAME
Document Type and Number:
Japanese Patent JP2011009293
Kind Code:
A
Abstract:
To provide a low cost ultraviolet sensor not sensitive to visible light and an ultraviolet ray of UV-A.
The wide gap oxide semiconductor and the ultraviolet sensor using it are configured such that a light-absorbing layer has a bandgap of at least 3.6 eV by adding aluminum oxide to zinc oxide. Thus, the ultraviolet sensor, which does not absorb light of long wavelengths such as visible light and an ultraviolet ray of UV-A and is sensitive to only ultraviolet rays of UV-B and UV-C, can be obtained at low cost.
Inventors:
TAMURA MANABU
HATAUCHI TAKASHI
ODAJIMA SATOSHI
HATAUCHI TAKASHI
ODAJIMA SATOSHI
Application Number:
JP2009148941A
Publication Date:
January 13, 2011
Filing Date:
June 23, 2009
Export Citation:
Assignee:
ALPS ELECTRIC CO LTD
International Classes:
H01L31/0264; G01J1/02
Domestic Patent References:
| JP2007027744A | 2007-02-01 | |||
| JP2000159547A | 2000-06-13 |