PURPOSE: To prevent contact resistance from being increased by forming a barrier metal layer at a contact part of a first diffusion layer and a second diffusion layer previously, forming a first wiring layer which is connected to the first wiring layer, forming a second wiring layer which is connected to the second diffusion layer by opening an insulation film which is formed on an entire surface on the first wiring layer on the second diffusion layer.

CONSTITUTION: A second-layer interlayer insulation film 7 is opened, thus allowing a titanium nitride film 6a to be exposed. A polysilicon layer 8 and a tungsten silicide film 9 are connected to an impurity region 3a through the titanium nitride film 6a and the titanium nitride film 6a which is a barrier metal layer is formed on the impurity region 3a which is connected to this wiring layer. A second-layer interlayer insulation film 7 and a third-layer interlayer insulation film 10 are opened, thus allowing a titanium nitride film 6b to be exposed. A polysilicon layer 11 and a tungsten silicide film 12 are connected to an impurity region 3b through the titanium nitriding film 6b and the titanium nitriding film 6b which is a barrier metal layer is formed on the impurity region 3b which is connected to this second wiring layer.