WIRING MEMBER AND ITS MANUFACTURE

Title:

WIRING MEMBER AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JP11145136

Kind Code:

A

Abstract:

To enhance an adhesion of a ruthenium metallic film and to lower its resistance value, by adding a specific atomic % of oxygen, to ruthenium metal or an alloy composed mainly of ruthenium metal.

A MOSFET 10 is provided with a silicon substrate 11, and on it a field oxide film 12 and a gate oxide film 13 are formed. On this gate oxide film 13 a gate electrode 17 is formed with a drain 14, a source 15 and a ruthenium film 16 in a vacuum tank by a sputtering apparatus. If 0.01-0.1 atomic % of oxygen is added to a gas such as a neon gas, etc., in this sputtering, its resistance value decreases sharply compared to a case of no oxygen, and it becomes possible to reduce noise as well as to solve gain shortage, when the MOSFET 10 is used in a high frequency region. Besides, it becomes possible to increase the degree of bonding, and to enhance adhesion by adding oxygen.

Inventors:

Okazaki, Hiroki

Application Number:

JP1997000304222

Publication Date:

May 28, 1999

Filing Date:

November 06, 1997

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

H01L21/285; H01L21/28; H01L21/3205; H01L23/52; H01L29/43; H01L29/78; H01L21/02; H01L23/52; H01L29/40; H01L29/66; (IPC1-7): H01L21/3205; H01L21/285; H01L29/43; H01L29/78

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