WIRING METHOD - SONY CORP

Title:

WIRING METHOD

Document Type and Number:

Japanese Patent JPS6146051

Kind Code:

A

Abstract:

PURPOSE:To prevent the generation of a disconnection at a stepped section and a defective contact in an opening section by forming a metallic layer onto an insulating layer with the opening section through a vapor phase growth method, leaving the metallic layer only on the inner wall surface of the opening section through anisotropic etching and shaping a conductor layer. CONSTITUTION:An aluminum layer 6 is formed onto an inter-layer insulating layer 4 including an opening section 5 through a vapor phase growth method. The aluminum layer 6 is removed with the exception of a section where there is the aluminum layer on the side wall surface of the opening section 5 by rective- ion etching the aluminum layer 6. An aluminum layer 7 is shaped onto the inter- layer insulating layer 4 including the opening section 5 through sputtering evaporation. A second layer wiring layer is formed by photoetching the aluminum layer 7. According to such a wiring method, aluminum 6 can be positioned positivvely on the inner wall surface of the opening section 5 in the inter-layer insulating layer 4, thus obtaining a contact section 8, in which there is no disconnection at a stepped section and which has small resisitivity.

Inventors:

NISHIHARA TOSHIYUKI

Application Number:

JP16765784A

Publication Date:

March 06, 1986

Filing Date:

August 10, 1984

Export Citation:

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