PURPOSE: To lower the resistance at a connecting part and to lower an wiring resistance by a method wherein, at a wiring structure and at an image sensor provided with the structure, a high-melting-point metal is laid between an electrode composed mainly of a metal oxide and a wiring connected to the electrode.
CONSTITUTION: A barrier metal layer 28 composed of molybdenum(Mo) is laid between a discrete electrode 24 and a signal deriving wiring 27. Instead of molybdenum(Mo), other high-melting-point metals (e.g. Ti, TiN, Ni, Cr, Ta, W) may be used for the barrier metal layer 28. A contact hole 26 is formed in an layer insulating film 25 formed by coating a polyimide; a resist is removed. A molybdenum(Mo) film is formed and patterned; the barrier metal film 28 is formed so as to cover the bottom part of each contact hole 26. Then, an aluminum(Al) film is formed and patterned; the signal deriving wiring 27 connected to each discrete electrode 24 is formed via the barrier metal layer 28. When the barrier metal layer 28 is laid, it is possible to prevent Al from being diffused and to ensure the good electrical connection of the discrete electrode 24 to the signal deriving wiring 27.
OKADA JUNJI
SAKAI YOSHIHIKO
