Title:
WIRING STRUCTURE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3191477
Kind Code:
B2
Abstract:
PURPOSE: To enhance the barrier property of the title wiring structure by forming a film having an excellent barrier property on the connection part of single crystal silicon substrate and a wiring part.
CONSTITUTION: A single crystal titanium nitride film 15 is provided between a single crystal silicon substrate 11 and a wiring 16 in the connecting region of at least the single crystal silicon substrate 11 and the wiring 16. The single crystal titanium nitride film 15 is to be formed by producing the epitaxial growing seed of the titanium nitride film 15 after cleaning up the surface of the silicon substrate 11 by cleaning up process in the state of being held in non- oxidative atmosphere based on the crystal orientation of the substrate 11 successively and epitaxially growing the titanium nitride film 15 using the epitaxially growing seed. At this time, the epitaxially growing seed is to be produced e.g. in the temperature atmosphere exceeding 700°C but not exceeding 1250°C.
Inventors:
角 ▲博▼文
Takaaki Miyamoto
Takaaki Miyamoto
Application Number:
JP6919793A
Publication Date:
July 23, 2001
Filing Date:
March 03, 1993
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/28; H01L21/285; (IPC1-7): H01L21/285; H01L21/28
Domestic Patent References:
| JP63230877A |
Attorney, Agent or Firm:
Kuninori Funabashi