Title:
Work cradle structure with upper part of low coefficient of thermal expansion
Document Type and Number:
Japanese Patent JP6322656
Kind Code:
B2
Abstract:
A support assembly for use in semiconductor processing includes an application substrate, a heater layer disposed directly on the application substrate, an insulation layer disposed on the heater layer, and a second substrate disposed on the insulation layer. The heater layer is directly disposed on the application substrate by a layered process such that the heater layer is in direct contact with the application substrate. The application substrate defines a material having a relatively low coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the heater layer. A periphery of the second substrate extends beyond a periphery of the application substrate.
Inventors:
Lindley, Jacob, Earl.
Application Number:
JP2015560368A
Publication Date:
May 09, 2018
Filing Date:
February 28, 2014
Export Citation:
Assignee:
Watlow Electric Manufacturing Company
International Classes:
H01L21/683
Domestic Patent References:
| JP2001313157A | ||||
| JP2007051317A | ||||
| JP2012519381A | ||||
| JP2006517351A | ||||
| JP2001297857A | ||||
| JP2011524631A | ||||
| JP2005109169A | ||||
| JP2008016796A | ||||
| JP2000286332A |
Foreign References:
| WO2006103854A1 | ||||
| US5631803 | ||||
| US20090174983 |
Attorney, Agent or Firm:
Suenari Mikio
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