PURPOSE: To make it possible to accurately measure the surface temperature of a work by arranging a radiation thermometer outside an ion implantation chamber to measure the surface temperature of the work and arranging a radiation heater, interlocking with the thermometer, in front of the work.
CONSTITUTION: A radiation thermometer 6 analyzes the wave lengths of a light from a wafer 5 and outputs an electric signal which is linearized with a converter 9 and enters a temperature controller 10 so that a specified temperature is obtained by fine controlling. The controlled output is sent to an electric power controller 11 so that the temperature of a heating device 8 of an infrared heater to control the surface temperature of the wafer to a specified value. Namely, the surface of the wafer 5 is heated, before ion implantation is applied, to a specified temperature by means of the radiation heater 8, followed by the ion implantation process. Since the wafer 5 is directly radiation-heated, energy efficiency is good. Since the surface temperature can be measured accurately irrespective of the contact condition between a work holder 3 and the wafer 5 and the thermometer 6 is interlocked to the heater 8, the wafer 5 is controlled accurately to reach the specified temperature.
SHIROU AIJI
NAKAMORI YUKIO
KASHIMOTO KAZUHIRO
ONO HARUTO
FUDA TAKENOBU
SAKURADA YUZO
ULVAC CORP
| JPS59204231A | 1984-11-19 | |||
| JPS584257A | 1983-01-11 | |||
| JPS61131354A | 1986-06-19 | |||
| JPS61248522A | 1986-11-05 |