To provide a memory device in which variations of coercive force in a memory array can be compensated accurately.

This memory device (50) is provided with a memory array (100) having a substrate, an array of memory cells (130) arranged on the substrate, row conductors (110) and column conductor (120) coupled to the memory cell (130). Also, the memory device (50) is provided with current sources (700, 800) generating a variable write-in current responding to temperature variations of the memory array (100). The variable write-in current is generated so that variations of coercive force of the memory cell (130) varied conforming to variations of array temperature can be adjusted. The current sources (700, 800) may be provided with temperature sensors (750, 850) providing an output continuously and instantly for a current sensor to enable to adjust accurately a write-in current. It is not required that operation of the memory device (50) is stopped and a current source is adjusted.