PURPOSE: To fine an exposure clearance by loading an absorber pattern at the central section of an X-ray transmitting film, fixing the transmitting film to a housing and mounting a spacer composed of an organic film having thickness equal to a desired exposure clearance on the surface of the peripheral section of the transmitting film.

CONSTITUTION: Absorber patterns 13 are loaded at the central section of an X-ray transmitting film 12, the rear of the peripheral section of the film 12 is fastened to a housing 11, at a central section of which an exposure window 11A is formed, and a spacer 15 consisting of an organic film having thickness equal to a desired exposure clearance G is installed on the surface of the peripheral section of the film 12. A wafer 1 is brought near to an X-ray mask, voltage is applied between both the wafer and the X-ray mask, and both the wafer and the X-ray mask are electrostatically attracted, and fixed. When the wafer is X-ray exposed under the state, the housing having a diameter of 100mm, the exposure window 11A having 25×25mm, the X-ray transmitting film 12 made up of SiN in thickness of 2μm, and an X-ray mask having the spacer 15 in height of 5μm are prepared, and the exposure of the exposure clearance G=5μm can be conducted without damaging the X-ray transmitting film 12 through said method in a He gas atmosphere at 1 atm.