Title:
X-RAY MASK AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3364151
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an X-ray mask used in X-ray lithography and its manufacture, that do not change stresses by high-temperature annealing in the atmosphere after the stress is adjusted to zero.
SOLUTION: This X-ray mask consists of a supporting film 12 and an X-ray absorber 14, that are formed on the supporting film 12 and comprises a first element comprising Ta, a second element selected from among B, Si and Ge and a third element to prevent the intake of oxygen from the outside. Even if high-temperature annealing is implemented in the atmosphere after the stresses are adjusted to zero, with this structure, the stress between the supporting film and the X-ray absorber will not change. As a result, the occurrence of warpages in the X-ray mask is prevented so that a highly accurate X-way mask can be formed.
Inventors:
Yoshihisa Iba
Application Number:
JP9886798A
Publication Date:
January 08, 2003
Filing Date:
April 10, 1998
Export Citation:
Assignee:
富士通株式会社
International Classes:
G21K5/02; G03F1/22; H01L21/027; (IPC1-7): H01L21/027; G03F1/16
Domestic Patent References:
| JP9180994A | ||||
| JP1079347A | ||||
| JP1070073A | ||||
| JP1070074A | ||||
| JP11209840A |
Attorney, Agent or Firm:
Yoshito Kitano
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